2015. 5. 12 1/3 semiconductor technical data 2N4401SC epitaxial planar npn transistor revision no : 0 general purpose application.switching application. features h complementary to the 2n4403sc maximum rating (ta=25 ? ) dim millimeters sot-23(1) a bc d e 2.90 0.1 1.30+0.20/-0.150.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 j k l m n 0.10 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 g a n c b d 1.30 max ll + _ 1. emitter2. base 3. collector note : * package mounted on 99.5% alumina 10 ? 8 ? 0.6 x ) marking lot no. zuc type name characteristic symbol rating unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 600 ma collector power dissipation p c * 350 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? downloaded from: http:///
2015. 5. 12 2/3 2N4401SC revision no : 0 electrical characteristics (ta=25 ? ) * pulse test : pulse width " 300 s, duty cycle " 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =60v, v eb =-3v - - 10 na collector cut-off current i cbo v cb =60v, i e =0 - - 10 na emitter cut-off current i ebo v eb =3v, i c =0 - - 10 na collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 75 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 40 - - v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 6.0 - - v dc current gain * h fe v ce =10v, i c =150ma 150 - 250 collector-emitter saturation voltage * v ce(sat) i c =500ma, i b =50ma - - 1.0 v base-emitter saturation voltage * v be(sat) i c =500ma, i b =50ma - - 2.0 v transition frequency f t v ce =20v, i c =20ma, f=100mhz 250 - - mhz downloaded from: http:///
2015. 5. 12 3/3 2N4401SC revision no : 0 downloaded from: http:///
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